Sergey Ivanov
- Department Head, Professor:HSE Campus in St. Petersburg / St. Petersburg School of Physics, Mathematics, and Computer Science / Joint Department with the Ioffe Institute
- Sergey Ivanov has been at HSE University since 2020.
Education, Degrees and Academic Titles
- 2012Professor
- 2000
Doctor of Sciences*
Higher Attestation Commission - 1989
Candidate of Sciences* (PhD)
Ioffe Institute of the Russian Academy of Sciences - 1983
Degree
Leningrad Electrotechnical Institute
* Candidate of Sciences
According to the International Standard Classification of Education (ISCED) 2011, Candidate of Sciences belongs to ISCED level 8 - "doctoral or equivalent", together with PhD, DPhil, D.Lit, D.Sc, LL.D, Doctorate or similar. Candidate of Sciences allows its holders to reach the level of the Associate Professor.
According to the International Standard Classification of Education (ISCED) 2011, Candidate of Sciences belongs to ISCED level 8 - "doctoral or equivalent", together with PhD, DPhil, D.Lit, D.Sc, LL.D, Doctorate or similar. Candidate of Sciences allows its holders to reach the level of the Associate Professor.
* Doctor of Sciences
A post-doctoral degree called Doctor of Sciences is given to reflect second advanced research qualifications or higher doctorates in ISCED 2011.
A post-doctoral degree called Doctor of Sciences is given to reflect second advanced research qualifications or higher doctorates in ISCED 2011.
Courses (2023/2024)
- Project seminar on solid state physics (Bachelor’s programme; St. Petersburg School of Physics, Mathematics, and Computer Science ; 4 year, 3 module)Rus
- Project seminar on solid state physics (Bachelor’s programme; St. Petersburg School of Physics, Mathematics, and Computer Science ; 3 year, 3 module)Rus
- Past Courses
Courses (2021/2022)
Research Seminar (Master’s programme; St. Petersburg School of Physics, Mathematics, and Computer Science ; 2 year, 2, 3 module)Rus
Publications65
- Article Rakhlin M., Klimko G., Sorokin S., Kulagina M., Zadiranov Y., Kazanov D., Shubina T., Toropov A., Ivanov S. Bright Single-Photon Sources for the Telecommunication O-Band Based on an InAs Quantum Dot with (In)GaAs Asymmetric Barriers in a Photonic Nanoantenna // Nanomaterials. 2022. Vol. 12. No. 9. Article 1562. doi
- Article Александров Е., Андреев А., Гальперин Ю., Гуляев Ю., Забродский А., Иванов С. В., Ивченко Е., Каплянский А., Парфеньев Р., Сурис Р., Хмельницкий Д., Щербаков И. Памяти Вадима Львовича Гуревича // Успехи физических наук. 2022. Т. 192. № 2. С. 229-230. doi
- Article Rakhlin M., Sorokin S., Kazanov D., Sedova I., Shubina T., Ivanov S., Mikhailovskii V., Toropov A. Bright single-photon emitters with a cdse quantum dot and multimode tapered nanoantenna for the visible spectral range // Nanomaterials. 2021. Vol. 11. No. 4. P. 1-10. doi
- Article Pobat D., Solov'ev V., Chernov M., Ivanov S. Distribution of Misfit Dislocations and Elastic Mechanical Stresses in Metamorphic Buffer InAlAs Layers of Various Constructions // Physics of the Solid State. 2021. Vol. 63. No. 1. P. 84-89. doi
- Article Jmerik V., Toropov A., Davydov V., Ivanov S. Monolayer-Thick GaN/AlN Multilayer Heterostructures for Deep-Ultraviolet Optoelectronics // Physica Status Solidi - Rapid Research Letters. 2021. Vol. 15. No. 9. Article 2100242. doi
- Article Jmerik V., Nechaev D., Orekhova K., Prasolov N., Kozlovsky V., Sviridov D., Zverev M., Gamov N., Grieger L., Wang Y., Wang T., Wang X., Ivanov S. Monolayer-scale gan/aln multiple quantum wells for high power e-beam pumped uv-emitters in the 240–270 nm spectral range // Nanomaterials. 2021. Vol. 11. No. 10. Article 2553. doi
- Article Mundry J., Spreyer F., Jmerik V., Ivanov S., Zentgraf T., Betz M. Nonlinear metasurface combining telecom-range intersubband transitions in GaN/AlN quantum wells with resonant plasmonic antenna arrays // Optical Materials Express. 2021. Vol. 11. No. 7. P. 2134-2144. doi
- Article Koshelev O., Nechaev D., Brunkov P., Ivanov S., Jmerik V. Stress control in thick AlN/c-Al2O3 templates grown by plasma-assisted molecular beam epitaxy // Semiconductor Science and Technology. 2021. Vol. 36. No. 3. Article 035007. doi
- Article Александров Е. Б., Андреев А. Ф., Архипов М. В., Захаров В. Е., Зеленый Л. М., Иванов С В, Ивченко Е. Л., Питаевский Л. П., Садовский М. В., Сурис Р. А., Шалагин А. М., Щербаков И. А. Николай Николаевич Розанов (к 80-летию со дня рождения) // Успехи физических наук. 2021. Т. 191. С. 445-446. doi
- Article Ячменев А., Лаврухин Д., Хабибуллин Р., Гончаров Ю., Спектор И., Зайцев К., Соловьев В., Иванов С. В., Пономарев Д. Фотопроводящий ТГц детектор на основе новых функциональных слоев в многослойных гетероструктурах // Оптика и спектроскопия. 2021. Т. 129. № 6. С. 741-746. doi
- Article Atanov N., Davydov Y., Glagolev V., Tereshchenko V., Nechaev D. V., Ivanov S., Jmerik V. N. A Photomultiplier With an AlGaN Photocathode and Microchannel Plates for BaF2 Scintillator Detectors in Particle Physics // IEEE Transactions on Nuclear Science. 2020. Vol. 67. No. 7. P. 1760-1764. doi
- Article Grossi D., Koelling S., Yunin P., Koenraad P. M., Klimko G., Sorokin S., Drozdov M., Ivanov S., Toropov A., Silov A. Design and Characterization of a Sharp GaAs/Zn(Mn)Se Heterovalent Interface: A Sub-Nanometer Scale View // Nanomaterials. 2020. No. 10. P. 1-11. doi
- Article Kalinovskii V., Kontrosh E., Klimko G., Ivanov S., Yuferev V., Ber B., Kazantsev D., Andreev V. Development and Study of the p–i–n GaAs/AlGaAs Tunnel Diodes for Multijunction Converters of High-Power Laser Radiation // Semiconductors. 2020. Vol. 54. P. 355-361. doi
- Article Chernov M., Solov`ev V., Komkov O., Firsov D., Andreev A., Sitnikova A., Ivanov S. Effect of design and stress relaxation on structural, electronic, and luminescence properties of metamorphic InAs(Sb)/In(Ga,Al)As/GaAs mid-IR emitters with a superlattice waveguide // Journal of Applied Physics. 2020. Vol. 127. No. 12. P. 1-6. doi
- Article Nechaev D. V., Koshelev O., Ratnikov V., Brunkov P., Myasoedov A., Sitnikova A., Ivanov S., Jmerik V. N. Effect of stoichiometric conditions and growth mode on threading dislocations filtering in AlN/c-Al2O3 templates grown by PA MBE // Micro and Nanostructures. 2020. Vol. 138. P. 1-8. doi
- Chapter S.V. Ivanov. Lasers and Zhores Alferov`s heterostructures: past, current, and future, in: PROCEEDINGS - INTERNATIONAL CONFERENCE LASER OPTICS 2020, ICLO 2020. St. Petersburg : IEEE, 2020. doi Ch. 1. doi
- Article Minkov G., Rut О., Sherstobitov A., Dvoretski S., Mikhailov N., Soloviev V., Chernov M., Ivanov S., Germanenko A. Magneto-intersubband oscillations in two-dimensional systems with an energy spectrum split due to spin-orbit interaction // Physical Review B: Condensed Matter and Materials Physics. 2020. Vol. 101. No. 24. P. 1-7. doi
- Article Sorokin S., Avdienko P., Sedova I., Kirilenko D., Davydov V., Komkov O., Firsov D., Ivanov S. Molecular Beam Epitaxy of Layered Group III Metal Chalcogenides on GaAs(001) Substrates // Materials. 2020. No. 13. P. 1-29. doi
- Article Vinnichenko M. Y., Fedorov A. D., Kharin N. Y., Panevin V. Y., Firsov D. A., Nechaev D. V., Ivanov S., Jmerik V. N. Near-infrared optical absorption in GaN/AlN quantum wells grown by molecular-beam epitaxy // Journal of Physics: Conference Series. 2020. Vol. 1482. P. 1-4. doi
- Article Toropov A., Evropeitsev E., Nestoklon M., Smirnov D., Shubina T., Kaibyshev V., Budkin G., Jmerik V. N., Nechaev D. V., Rouvimov S., Ivanov S., Gil B. Strongly Confined Excitons in GaN/AlN Nanostructures with Atomically Thin GaN Layers for Efficient Light Emission in Deep-Ultraviolet // Nano Letters. 2020. Vol. 20. No. 1. P. 158-165. doi
- Book Ultraviolet Materials and Devices / Отв. ред.: S. Ivanov, T. Shubina, V. N. Jmerik, B. Gil. Wiley-VCH, 2020. doi
- Chapter Ivanov S., Shubina T., Jmerik V. N., Gil B. Ultraviolet Materials and Devices, in: Ultraviolet Materials and Devices / Отв. ред.: S. Ivanov, T. Shubina, V. N. Jmerik, B. Gil. Wiley-VCH, 2020. doi P. 1-2. doi
- Article Агранович В. М., Александров Е. Б., Багаев С. Н., Грехов И. В., Забродский А. Г., Иванов С В, Ивченко Е. Л., Кведер В. В., Новиков Б. В., Сурис Р. А., Тимофеев В. Б., Щербаков И. А. Александр Александрович Каплянский (к 90-летию со дня рождения) // Успехи физических наук. 2020. Т. 190. С. 1343-1344. doi
- Article Калиновский В. С., Контрош Е. В., Климко Г. В., Иванов С. В., Юферев В. С., Бер Б. Я., Казанцев Д. Ю., Андреев В. М. Разработка и исследование туннельных p-i-n-диодов GaAs/AlGaAs для многопереходных преобразователей мощного лазерного излучения // Физика и техника полупроводников. 2020. № 3. С. 285-291. doi
- Chapter Atanov N. V., Davydov Y. I., Glagolev V. V., Ivanov S., Jmerik V. N., Nechaev D. V., Tereshchenko V. V. A Scintillation Detector with a Barium Fluoride Crystal and a Photomultiplier with an AlGaN-based Photocathode and Microchannel Plates, in: 2019 IEEE Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC). Manchester : Institute of Electrical and Electronics Engineers, 2019. doi P. 1-3. doi
- Article Davydov V., Jmerik V., Roginskii E., Kitaev Y., Beltukov Y., Smirnov M., Nechaev D., Smirnov A., Eliseyev I., Brunkov P., Ivanov S. Boson Peak Related to Ga Nanoclusters in AlGaN Layers Grown by Plasma-Assisted Molecular Beam Epitaxy at Ga-Rich Conditions // Semiconductors. 2019. Vol. 53. No. 11. P. 1479-1488. doi
- Article Wang Y., Rong X., Ivanov S., Jmerik V., Chen Z., Wang H., Wang T., Wang P., Jin P., Chen Y., Kozlovsky V., Sviridov D., Zverev M., Zhdanova E., Gamov N., Studenov V., Miyake H., Li H., Guo S., Yang X., Xu F., Yu T., Qin Z., Ge W., Shen B., Wang X. Deep Ultraviolet Light Source from Ultrathin GaN/AlN MQW Structures with Output Power Over 2 Watt // Advanced Optical Materials. 2019. Vol. 7. No. 10. P. 1-7. doi
- Article Sviridov D. E., Jmerik V. N., Rouvimov S., Nechaev D. V., Kozlovsky V. I., Ivanov S. Direct observation of spatial distribution of carrier localization sites in ultrathin GaN/AlN quantum wells by spreading resistance microscopy // Applied Physics Letters. 2019. Vol. 114. No. 6. P. 1-5. doi
- Article Solov’ev V. A., Chernov M. Y., Komkov O. S., Firsov D. D., Sitnikova A. A., Ivanov S. Effect of Strongly Mismatched GaAs and InAs Inserts in a InAlAs Buffer Layer on the Structural and Optical Properties of Metamorphic InAs(Sb)/InGaAs/InAlAs/GaAs Quantum-Confined Heterostructures / Пер. с рус. // JETP Letters. 2019. Vol. 109. P. 377-381. doi
- Article Kotova L. V., Platonov A. V., Kats V. N., Sorokin S. V., Ivanov S., André R., Bugrov V. E., Kochereshko V. P. Effects of Spatial Dispersion in Symmetric and Asymmetric Semiconductor Quantum Wells // Physica Status Solidi (B): Basic Research. 2019. Vol. 256. No. 6. P. 1-5. doi
- Article Sai P. O., Safryuk-Romanenko N. V., But D. B., Cywiński G., Boltovets N. S., Brunkov P. N., Jmeric N. V., Ivanov S., Shynkarenko V. V. Features of the Formation of Ohmic Contacts to n+-InN // Ukrainian Journal of Physics. 2019. Vol. 64. No. 1. P. 56-62. doi
- Article Rakhlin M. V., Belyaev K. G., Klimkoa G. V., Sedova I. V., Kulagina M. M., Zadirano Y. M., Troshkov S. I., Guseva Y. A., Terent’ev Y. V., Ivanov S., Toropov A. A. Highly Efficient Semiconductor Emitter of Single Photons in the Red Spectral Range / Пер. с рус. // JETP Letters. 2019. Vol. 109. No. 3. P. 145-149. doi
- Article Fominykh N., Solov`ev V., Chernov M., Ivanov S. In situ study of elastic strain relaxation in metamorphic InAs(Sb)/In(Ga,Al)As/GaAs heterostructures by using reflection high energy electron diffraction // Journal of Physics: Conference Series. 2019. Vol. 1400. No. 5. P. 1-6. doi
- Article Firsov D. D., Komkov O. S., Solov’ev V. A., Semenov A. N., Ivanov S. Infrared photoreflectance of InSb-based two-dimensional nanostructures // Journal of the Optical Society of America B: Optical Physics. 2019. Vol. 36. No. 4. P. 910-916. doi
- Article Shalygin V., Moldayskaya M., Panevin V., Galimov A., Melentev G., Artemyev A., Firsov D., Vorobjev L., Klimko G., Usikova A., Komissarova T., Sedova I., Ivanov S. Interaction of surface plasmon-phonon polaritons with terahertz radiation in heavily doped GaAs epilayers // Journal of Physics: Condensed Matter. 2019. Vol. 31. No. 10. P. 1-8. doi
- Article Robin Y., Evropeitsev E., Shubina T., Kirilenko D., Davydov V., Smirnov A., Toropov A., Eliseyev I., Bae S., Kushimoto M., Nitta S., Ivanov S., Amano H. Localization and transient emission properties in InGaN/GaN quantum wells of different polarities within core–shell nanorods // Nanoscale. 2019. No. 1. P. 193-199. doi
- Article Ivanov S., Chernov M., Solov'ev V., Brunkov P., Firsov D., Komkov O. Metamorphic InAs(Sb)/InGaAs/InAlAs nanoheterostructures grown on GaAs for efficient mid-IR emitters // Progress in Crystal Growth and Characterization of Materials. 2019. Vol. 65. No. 1. P. 20-35. doi
- Article Sorokin S. V., Avdienko P. S., Sedova I. V., Kirilenko D. A., Yagovkina M. A., Smirnov A. N., Davydov V. Y., Ivanov S. Molecular-Beam Epitaxy of Two-Dimensional GaSe Layers on GaAs(001) and GaAs(112) Substrates: Structural and Optical Properties / Пер. с рус. // Semiconductors. 2019. Vol. 53. P. 1131-1137. doi
- Article Kozyrev N. V., Akhmadullin R. R., Namozov B. R., Kusrayev Y. G., Sedova I. V., Sorokin S. V., Ivanov S. Multiple spin-flip Raman scattering in CdSe/ZnMnSe quantum dots // Physical Review B: Condensed Matter and Materials Physics. 2019. Vol. 99. No. 3. P. 1-7. doi
- Article Evropeitsev E., Robin Y., Shubina T., Bae S., Nitta S., Kirilenko D., Davydov V., Smirnov A., Toropov A., Kushimoto M., Ivanov S., Amano H. Narrow Excitonic Lines in Core–Shell Nanorods With InGaN/GaN Quantum Wells Intersected by Basal Stacking Faults // Physica Status Solidi (B): Basic Research. 2019. Vol. 256. No. 6. P. 1-6. doi
- Article Komkov O. S., Firsov D. D., Andreev A. D., Chernov M. Y., Solov'ev V. A., Ivanov S. Peculiarities of the energy spectrum of InSb/InAs/InGaAs/InAlAs/GaAs nanoheterostructures revealed by room temperature photomodulation FTIR spectroscopy // Japanese Journal of Applied Physics. 2019. No. 58. P. 1-4. doi
- Article Ivanov S. Remembering Zhores Alferov // Nature Photonics. 2019. Vol. 13. No. 10. P. 657-659. doi
- Article Solov’ev V. A., Chernov M. Y., Morozov S. V., Kudryavtsev K. E., Sitnikova A. A., Ivanov S. Stimulated Emission at a Wavelength of 2.86 μm from In(Sb, As)/In(Ga, Al)As/GaAs Metamorphic Quantum Wells under Optical Pumping / Пер. с рус. // JETP Letters. 2019. Vol. 110. P. 313-318. doi
- Article Lutsenko E., Rzheutski M., Nagorny A., Danilchyk A., Nechaev D., Jmerik V., Ivanov S. Stimulated emission, photoluminescence, and localisation of nonequilibrium charge carriers in ultrathin (monolayer) GaN/AlN quantum wells / Пер. с рус. // Quantum Electronics. 2019. Vol. 49. No. 6. P. 535-539. doi
- Article Koshelev O., Nechaev D., Brunkov P., Ratnikov V., Troshkov S., Ivanov S., Jmerik V. Stress evolution during growth of AlN templates on c-Al2O3 substrates by plasma-assisted molecular beam epitaxy // Journal of Physics: Conference Series. 2019. Vol. 1400. No. 5. P. 1-5. doi
- Article Avdienko P., Sorokin S., Sedova I., Kirilenko D., Smirnov A., Eliseev I., Davydov V., Ivanov S. Structural and Optical Properties of GaSe/GaAs(001) Layers Grown by Molecular Beam Epitaxy // Acta Physica Polonica A . 2019. Vol. 136. No. 4. P. 608-612. doi
- Article Koshelev O., Nechaev D., Brunkov P., Orekhova K., Troshkov S., Ivanov S., Jmerik V. Suppression of Stark effect in ultra-thin stress-free GaN/AlN multiple quantum well structures grown by plasma-assisted molecular beam epitaxy // Journal of Physics: Conference Series. 2019. Vol. 1410. P. 1-6. doi
- Chapter Zamoryanskaya M. V., Ivanova E. V., Orekhova K. N., Kravets V. A., Trofimov A. N., Usacheva V. P., Ivanov S. The study of nanoheterostructures transport properties by local cathodoluminescence technique, in: AIP Conference Proceedings Vol. 2064: State-of-the-art trends of Scientific Research of Artificial and Natural Nanoobjects, STRANN-2018. AIP Publishing LLC, 2019. Ch. 040007. P. 1-5. doi
- Article Bimberg D., Ivanov S., Vekselberg V. Zhores Ivanovich Alferov // PHYSICS TODAY. 2019. Vol. 72. No. 10. P. 72. doi
- Article Соловьев В. А., Чернов М. Ю., Комков О. С., Фирсов Д. Д., Ситникова А. А., Иванов С. В. Влияние сильнонапряженных вставок GaAs и InAs в буферном слое InAlAs на структурные и оптические свойства метаморфных квантово-размерных гетероструктур InAs(Sb)/InGaAs/InAlAs/GaAs // Письма в Журнал экспериментальной и теоретической физики. 2019. Т. 109. № 6. С. 381-386. doi
- Article Сорокин С., Авдиенко П., Седова И., Кириленко Д., Яговкина М., Смирнов А., Давыдов В., Иванов С. В. Молекулярно-пучковая эпитаксия двухмерных слоев GaSe на подложках GaAs(001) и GaAs(112): структурные и оптические свойства // Физика и техника полупроводников. 2019. № 8. С. 1152-1158. doi
- Article Афанасьев В., Бобашев С., Быков А., Гордеев Ю., Забродский А., Зиновьев А., Иванов С. В., Каплянский А., Панов М., Петров М., Сурис Р., Шергин А. Памяти Вадима Васильевича Афросимова // Успехи физических наук. 2019. Т. 189. № 8. С. 901-902. doi
- Article Асеев А., Варшалович Д., Велихов Е., Грехов И., Гуляев Ю., Жуков А. Е., Иванов С. В., Каплянский А., Копьев П., Красников Г., Сурис Р., Фортов В. Памяти Жореса Ивановича Алфёрова // Успехи физических наук. 2019. Т. 62. № 8. С. 899-900. doi
- Article Соловьев В. А., Чернов М. Ю., Морозов С. В., Кудрявцев К. Е., Ситникова А. А., Иванов С. В. Стимулированное излучение на длине волны 2.86 мкм из метаморфных In(Sb,As)/In(Ga,Al)As/GaAs квантовых ям в условиях оптической накачки // Письма в Журнал экспериментальной и теоретической физики. 2019. Т. 110. № 5. С. 297-302. doi
- Article Луценко Е. В., Ржеуцкий Н. В., Нагорный А. В., Данильчик А. В., Нечаев Д. В., Жмерик В. Н., Иванов С. В. Стимулированное излучение, фотолюминесценция и локализация неравновесных носителей заряда в сверхтонких (монослойных) квантовых ямах GaN/AlN // Квантовая электроника. 2019. Т. 49. № 6. С. 535-539.
- Article Рахлин М. В., Беляев К. Г., Климко Г. В., Седова И. В., Кулагина М. М., Задиранов Ю. М., Трошков С. И., Гусева Ю. А., Терентьев Я. В., Иванов С. В., Торопов А. Эффективный полупроводниковый источник одиночных фотонов красного спектрального диапазона // Письма в Журнал экспериментальной и теоретической физики. 2019. Т. 109. № 3. С. 147-151. doi
- Chapter Ivanov S., Sorokin S., Sedova S. Molecular Beam Epitaxy of Wide Gap II−VI Laser Heterostructures, in: Molecular Beam Epitaxy: From Research to Mass Production. Second Edition. Elsevier, 2018. Ch. 25. P. 571-595. doi
- Article Terent'ev Y. V., Danilov S. N., Loher J., Schuh D., Bougeard D., Weiss D., Durnev M. V., Tarasenko S. A., Mukhin M., Ivanov S., Ganichev S. D. Magneto-photoluminescence of InAs/InGaAs/InAlAs quantum well structures // Applied Physics Letters. 2014. Vol. 104. No. 10. P. 1-6. doi
- Article Terent'ev Y. V., Mukhin M., Toropov A. A., Nestoklon M. O., Meltser B. Y., Semenov A. N., Solov'ev V. A., Ivanov S. Photoluminescence studies of Zeeman effect in type-II InSb/InAs nanostructures // Physical Review B: Condensed Matter and Materials Physics. 2013. Vol. 87. No. 4. P. 1-19. doi
- Article Olbrich P., Zoth C., Drexler C., Lechner V., Lutz P., Ganichev S. D., Terent'ev Y. V., Bel'kov V. V., Mukhin M., Tarasenko S. A., Semenov A. N., Solov'ev V. A., Klimko G. V., Komissarova T. A., Ivanov S. Exchange interaction of electrons with Mn in hybrid AlSb/InAs/ZnMnTe structures // Verhandlungen der Deutschen Physikalischen Gesellschaft. 2012. P. 1-1.
- Article Liaci F., Kaibyshev V. K., Toropov A. A., Terent'ev Y. V., Mukhin M., Klimko G. V., Gronin S. V., Sedova I. V., Sorokin S. V., Ivanov S. Spin injection in a heterovalent structure with coupled quantum wells GaAs/(Al,Ga)As/(Zn,Mn)Se/ZnSe // Physica Status Solidi (C) Current Topics in Solid State Physics. 2012. Vol. 9. No. 8-9. P. 1790-1792. doi
- Article Mukhin M., Terent'ev Y. V., Golub L. E., Nestoklon M. O., Meltser B. Y., Semenov A. N., Solov'ev V. A., Toropov A. A., Ivanov S. Electron Spin Alignment in InSb Type‐II Quantum Dots in an InAs Matrix // AIP Conference Proceedings. 2011. Vol. 1416. No. 1. P. 34-37. doi
- Article Terent'ev Y. V., Mukhin M., Toropov A. A., Meltser B. Y., Semenov A. N., Ivanov S. Excitation Power Control of Circular Polarization of Magneto‐Photoluminescence from InSb/InAs Quantum Dots // AIP Conference Proceedings. 2011. Vol. 1399. No. 1. P. 667-668. doi
- Article Mukhin M., Terent'ev Y. V., Golub L. E., Nestoklon M. O., Meltser B. Y., Semenov A. N., Solov'ev V. A., Sitnikova A. A., Toropov A. A., Ivanov S. Magneto-Optical Studies of Narrow Band-Gap Heterostructures with Type II Quantum Dots InSb in an InAs Matrix // Acta Physica Polonica A . 2011. Vol. 120. No. 5. P. 868-869. doi
- Article Terent'ev Y. V., Mukhin M., Solov'ev V. A., Semenov A. N., Meltser B. Y., Usikova A. A., Ivanov S. Study of photoluminescence and electroluminescence mechanisms in quantum-confined InSb/InAs heterostructures / Пер. с рус. // Semiconductors. 2010. Vol. 44. No. 8. P. 1064-1069. doi
HSE University Staff Members Elected to the Russian Academy of Sciences
The results of the vote were announced at the General Assembly of the Russian Academy of Sciences (RAS), which took place from June 1-3. The newly elected Members and Corresponding Members of the RAS include eight scholars from HSE University.